Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers
نویسندگان
چکیده
منابع مشابه
Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors
Bottom-gate thin film transistors with amorphous zinc tin oxide channels were grown by atomic layer deposition. The films maintained their amorphous character up to temperatures over 500 C. The highest field effect mobility was 13 cm/V s with on-to-off ratios of drain current 10–10. The lowest subthreshold swing of 0.27 V/decade was observed with thermal oxide as a gate insulator. The channel l...
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ژورنال
عنوان ژورنال: Applied Sciences
سال: 2017
ISSN: 2076-3417
DOI: 10.3390/app7101099